Autor: |
Kunihiro Suzuki, Ritsuo Sudo |
Rok vydání: |
2000 |
Předmět: |
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Zdroj: |
Solid-State Electronics. 44:2253-2257 |
ISSN: |
0038-1101 |
DOI: |
10.1016/s0038-1101(00)00219-7 |
Popis: |
By expanding our previously proposed analytical expression for dose-dependent ion-implanted impurity concentration profiles using a main function and a tail function, we improve the model so that the parameters can be extracted more robustly and extend the model to accommodate double-peak profiles. The shape of our new profile model can be imaged more clearly from a set of parameters. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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