Analytical expression for ion-implanted impurity concentration profiles

Autor: Kunihiro Suzuki, Ritsuo Sudo
Rok vydání: 2000
Předmět:
Zdroj: Solid-State Electronics. 44:2253-2257
ISSN: 0038-1101
DOI: 10.1016/s0038-1101(00)00219-7
Popis: By expanding our previously proposed analytical expression for dose-dependent ion-implanted impurity concentration profiles using a main function and a tail function, we improve the model so that the parameters can be extracted more robustly and extend the model to accommodate double-peak profiles. The shape of our new profile model can be imaged more clearly from a set of parameters.
Databáze: OpenAIRE