Dry Cleaning for Fe Contaminants on Si and SiO2 Surfaces with Silicon Chlorides
| Autor: | Mayumi Shigeno, Kanetake Takasaki, Takashi Ito, Satoshi Ohkubo, Yoshiko Okui, Rinji Sugino |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Silicon
Renewable Energy Sustainability and the Environment Radical Inorganic chemistry chemistry.chemical_element Dry cleaning Contamination Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Adsorption chemistry Materials Chemistry Electrochemistry Surface flatness Irradiation |
| Zdroj: | Journal of The Electrochemical Society. 144:3984-3988 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1838123 |
| Popis: | While investigating the surface dependence of the dry cleaning technique using Cl radicals generated with UV irradiation (UV/Cl 2 , we found that silicon chlorides [SiCl x (x = 1 to 4)], etching products created from a reaction between Si and Cl radicals, can remove Fe contaminants. SiCl 4 gas removes Fe contaminants existing on both Si and SiO 2 surfaces without surface dependence. The surface residue due to the adsorption of SiCl 4 is insignificant. We also found that a small addition of Cl 2 to SiCl 4 is advantageous for dry cleaning Si surfaces. Surface flatness and composition are maintained after cleaning with Cl 2 + SiCl 4 (5:195 ml/min) gas mixture. Dry cleaning technology has been significantly improved by the use of an SiCl 4 -based system instead of Cl 2 alone. |
| Databáze: | OpenAIRE |
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