Different shape of GaAs quantum structures under various growth conditions
| Autor: | Jung Il Lee, Jin Dong Song, Jaesu Kim, Sam Kyu Noh, Won Jun Choi, Byounggu Jo, Jae Young Leem, Jin Soo Kim, Dae Kon Oh, Cheul Ro Lee, Dong Woo Park, Kwang Jae Lee, Mun Seok Jeong, Hoonsoo Kang, Sang Jun Lee, Jong Su Kim, Clare C. Byeon |
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| Rok vydání: | 2010 |
| Předmět: |
Condensed Matter::Other
Diffusion Metals and Alloys chemistry.chemical_element Flux Nanotechnology Surfaces and Interfaces Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Molecular physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry Quantum dot Materials Chemistry Gallium Quantum Arsenic Deposition (law) |
| Zdroj: | Thin Solid Films. 518:6500-6504 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.03.151 |
| Popis: | We report the influences of growth parameters on the characteristics of GaAs quantum rings (QRs) and quantum dots (QDs) formed on AlGaAs/GaAs by the droplet epitaxy (DE) method. After forming Ga droplets on the AlGaAs/GaAs surface, varying amounts of arsenic (As) flux were introduced to fabricate the GaAs quantum structures. By decreasing the As flux from 8 × 10 − 5 to 3 × 10 − 5 Torr, the shape of the GaAs quantum structures was changed from QDs to elongated QRs. With further decreasing As flux, the shape of the elongated QRs became symmetric. The formation characteristics of the GaAs QRs from the QDs with the amount of As flux were discussed in terms of migration behaviors of the gallium (Ga) atoms on the GaAs(001)- c (4 × 4) surface. The effects of the amount of Ga supply and the growth temperature for the deposition of Ga droplets on the formation of the GaAs quantum structures were also considered. |
| Databáze: | OpenAIRE |
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