A monolithic 60 GHz diode mixer and IF amplifier in compatible technology
| Autor: | G. Ebert, K.-E. Schmegner, J.-M. Dieudonne, W. Schwab, B. Adelseck, A. Colquhoun, J. Selders |
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| Rok vydání: | 1989 |
| Předmět: |
Radiation
Materials science business.industry Schottky diode Integrated circuit Condensed Matter Physics Noise figure Cutoff frequency law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit Diode Electronic circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 37:2142-2147 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/22.44133 |
| Popis: | A technology is described which allows the monolithic integration of millimeter-wave Schottky diodes and MESFETs on one chip. The Schottky diodes have a cutoff frequency f/sub T/ of 2300 GHz. A monolithic 60-GHz mixer chip using these diodes shows a conversion loss of 6 dB and a noise figure (DSB) of 3.3 dB. The MESFETs have an f/sub max/ up to 70 GHz. A two-stage IF amplifier realized with this technology shows a gain of 20.6 dB and a noise figure of 1.7 dB at 4 GHz. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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