Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing

Autor:	S. Koumetz, J. Marcon, Mohamed Ketata, K. Ketata
Rok vydání:	1999
Předmět:	Diffusion transport Mechanical Engineering Semiconductor materials Inorganic chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Post growth annealing chemistry Mechanics of Materials Materials Chemistry Redistribution (chemistry) Beryllium Rapid thermal annealing
Zdroj:	Journal of Alloys and Compounds. 285:L1-L4
ISSN:	0925-8388
DOI:	10.1016/s0925-8388(99)00012-2
Popis:	In this work we present results of beryllium diffusion during the post-growth rapid thermal annealing at 700–900°C in InGaAsP layers grown by GSMBE. The experimental structure consist of a 2000 A Be-doped layer (3×1019 cm–3) In0.73Ga0.27As0.58P0.42 layer sandwiched between 5000 A undoped In0.73Ga0.27As0.58P0.42 layers. A kick-out model of the substitutional-interstitial diffusion mechanism, which involves neutral Be interstitial species and positively charged group III self-interstitials, is proposed to explain the observed SIMS depth profiles.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::362fd4e11c4231df55a00f9bc34e2133 https://doi.org/10.1016/s0925-8388(99)00012-2 Zobrazit plný text záznamu Full Text from ScienceDirect