| Popis: |
We report the result of a dark current measurement of a Type -II superlattice (T2SL) infrared focal plane array (FPA) , which consists of a 6 P cutoff T2SL detector array and the readout integration circuit (ROIC) ISC0903 of FLIR Systems. In order to measure the dark current of the FPA, we obtained images with different exposure time s in a fully closed cold shie ld of 77 K. Using the temporal change rate of the output and considering the charge conversion efficiency of the ROIC, we obtain ed a dark current density with an average value of 4 × 10 -5 A/cm 2 at a bias of -100 mV. We also compare the result of the FPA dark current measurement with that of a test element group (TEG), which wa s a single pixel detector, fabricated by the same process as the FPA. The dark current density of the TEG wa s 3 × 10 -6 A/cm 2 at a bias of -100 mV , lower than that of the FPA. We disc uss the discrepancy between the dark current densit ies of the FPA and the TEG. Keywords: InAs/GaSb Type -II superlattice infrared focal plane array detector , m id-wavelength infrared , dark current |
