Czochralski growth of 2 in. Ca3Ta(Ga,Al)3Si2O14 single crystals for piezoelectric applications
| Autor: | Yuui Yokota, Yuji Ohashi, Tetsuo Kudo, Akira Yoshikawa, Kei Kamada, Vladimir V. Kochurikhin, Andrey Medvedev, Shunsuke Kurosawa, Yasuhiro Shoji, Masanori Kitahara, Valery Chani |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Surface acoustic wave 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Piezoelectricity Inorganic Chemistry Crystal Crystallography 0103 physical sciences Homogeneity (physics) Materials Chemistry Czochralski method 0210 nano-technology Chemical composition Phase diagram |
| Zdroj: | Journal of Crystal Growth. 452:135-140 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2015.12.031 |
| Popis: | Growth of 2-in. diameter Al-substituted Ca 3 TaGa 3 Si 2 O 14 crystals by Czochralski method is reported. The crystals were grown from the melt of Ca 3 TaGa 1.5 Al 1.5 Si 2 O 14 composition and had langasite structure. No inclusions of secondary phases were detected in these crystals. The Ca 3 Ta(Ga,Al) 3 Si 2 O 14 mixed crystals produced using non-substituted Ca 3 TaGa 3 Si 2 O 14 seeds were defective. They had cracks and/or poly-crystalline structure. However, those grown on the seed of approximately Ca 3 TaGa 1.5 Al 1.5 Si 2 O 14 composition were defect-free. Phase diagram of the Ca 3 TaGa 3 Si 2 O 14 –Ca 3 TaAl 3 Si 2 O 14 pseudo-binary system and segregation phenomenon are discussed in some details. Homogeneity of the crystals was evaluated by measuring 2D-mapping of leaky surface acoustic wave (LSAW) velocities for Y -cut Ca 3 TaGa 1.5 Al 1.5 Si 2 O 14 substrate. Although some inhomogeneities were observed due to slight variations in chemical composition, the crystal had acceptable homogeneity for applications in acoustic wave devices exhibiting the LSAW velocity variation within ±0.048%. |
| Databáze: | OpenAIRE |
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