Visible and 1.54 $\mu$m Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering
| Autor: | Selcuk Yerci, Rui Li, T. van Buuren, Sergei O. Kucheyev, Soumendra N. Basu, L. Dal Negro |
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| Rok vydání: | 2010 |
| Předmět: |
Amorphous silicon
Photoluminescence Materials science Fabrication business.industry Nanocrystalline silicon Nanophotonics chemistry.chemical_element Atomic and Molecular Physics and Optics Erbium chemistry.chemical_compound chemistry Optoelectronics Stimulated emission Electrical and Electronic Engineering Photonics business |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 16:114-123 |
| ISSN: | 1558-4542 1077-260X |
| DOI: | 10.1109/jstqe.2009.2032516 |
| Popis: | In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiNx) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiNx). The mechanisms of Er excitation and de-excitation in Er:SiNx are discussed in relation to the engineering of efficient light sources at 1.54 μm for on-chip nanophotonics applications. These results suggest that Er-doped amorphous silicon nitride films have a large potential for the fabrication of optically active photonic devices based on the Si technology. |
| Databáze: | OpenAIRE |
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