Pressure dependence of the optical-absorption edge of AlN and graphite-type BN

Autor:	Osamu Mishima, Tadashi Endo, Akifumi Onodera, Hisamitsu Akamaru
Rok vydání:	2002
Předmět:	Condensed matter physics Absorption spectroscopy Band gap Chemistry Semiconductor materials Mineralogy General Chemistry Edge (geometry) Pressure dependence Condensed Matter Physics Absorption edge General Materials Science Direct and indirect band gaps Graphite
Zdroj:	Journal of Physics and Chemistry of Solids. 63:887-894
ISSN:	0022-3697
DOI:	10.1016/s0022-3697(01)00244-x
Popis:	Effect of pressure on the band gaps on AlN and graphite-type BN (g-BN) has been studied up to 2.7 GPa at room temperature by measuring the optical-absorption edge of single crystals of each substance pressurized in a sapphire-anvil cell. The direct band gap of AlN shifted towards higher energy at a rate of 49±1 meV/GPa, whereas in g-BN the pressure dependence of the band gap was −36±1 meV/GPa. The results are compared with existing first-principles calculations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::361c03183fc5796c82562a69697b496f https://doi.org/10.1016/s0022-3697(01)00244-x Zobrazit plný text záznamu Full Text from ScienceDirect