Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition
| Autor: | Jagdish Narayan, Jayesh Bharathan, George A. Rozgonyi, Gary E. Bulman |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Analytical chemistry Substrate (electronics) Chemical vapor deposition Combustion chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Crystallography Carbon film Transmission electron microscopy Materials Chemistry Deposition (phase transition) Electrical and Electronic Engineering Dislocation |
| Zdroj: | Journal of Electronic Materials. 42:2888-2896 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-013-2686-9 |
| Popis: | We studied the microstructural characteristics and electrical properties of epitaxial Ge films grown on Si(001) substrates by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The films were grown using a two-step technique by reduced-pressure chemical vapor deposition, where the first step promotes two-dimensional growth at a lower substrate temperature. We observed a decrease in defect density with increasing film thickness. Ge films with thickness of 3.5 μm exhibited threading dislocation densities of 5 × 106 cm−2, which yielded devices with dark current density of 5 mA cm−2 (1 V reverse bias). We also noted the presence of stacking faults in the form of lines in the films and establish that this is an important defect for Ge films grown by this deposition technique. |
| Databáze: | OpenAIRE |
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