Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption

Autor:	M. Dutta, Kristina Driscoll, Theodore D. Moustakas, I. Friel, E. Kulenica, Roberto Paiella
Rok vydání:	2005
Předmět:	Absorption spectroscopy business.industry Chemistry Condensed Matter Physics Spectral line Inorganic Chemistry Optics Materials Chemistry Stress relaxation Sapphire Optoelectronics Thin film business Absorption (electromagnetic radiation) Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 278:387-392
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2005.01.042
Popis:	AlN/GaN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0 0 0 1) sapphire substrates. Intersubband (ISB) absorption in the range of 1.5–1.9mm was investigated in these structures as a function of the main quantum well design parameters. It is found that the ISB transition line width does not depend strongly on the degree of strain relaxation in the investigated structures, but rather is sensitive to both the well and barrier widths. This is explained by considering well/barrier thickness fluctuations. A reduction in the ISB absorption line width was
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::360a51ff41af6c3f261aeedde9f16560 https://doi.org/10.1016/j.jcrysgro.2005.01.042 Zobrazit plný text záznamu Full Text from ScienceDirect