Direct electron-beam patterning on a nanometer scale of CaF2 layers grown by MBE on silicon <111>
Autor: | L. M. Brown, G. A. C. Jones, J. H. Paterson, Richard Zanetti, King-Ning Tu |
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Rok vydání: | 1992 |
Předmět: |
Materials science
Silicon business.industry Electron energy loss spectroscopy Energy-dispersive X-ray spectroscopy chemistry.chemical_element chemistry Scanning transmission electron microscopy Cathode ray Optoelectronics Atomic physics business Electron-beam lithography Beam (structure) Molecular beam epitaxy |
Zdroj: | SPIE Proceedings. |
ISSN: | 0277-786X |
Popis: | MBE grown calcium fluoride has been directly patterned using an 100 keV electron beam. An array of dots 4 nm in diameter with a period of 15 nm and lines 7 nm wide are reported. The dependence of the damage process on beam current showed that there is a simple dose requirement of 9 X 103 C.cm-2, which corresponds to 5 X 108 e-nm-2. Complete holes were not observed. Electron energy loss spectroscopy studies indicate that fluorine has been removed and metallic calcium is left in the damaged region. The damage process was studied with the sample orientated along the direction and tilted away from this axis by up to 10 degrees. No orientation dependence in the hole size or dose required was observed.© (1992) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
Databáze: | OpenAIRE |
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