Electronic properties and potential applications of the heterojunction between silicon and multi‐nanolayer amorphous selenium
| Autor: | R. Toyama, Jun Ochiai, Takatoshi Yamada, Daniel H. C. Chua, Tomoaki Masuzawa, Ichitaro Saito, Ken Okano, Joshua D. John |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Silicon Tandem business.industry Diffusion Photodetector chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences chemistry Rectification 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology p–n junction business Selenium |
| Zdroj: | Electronics Letters. 53:1270-1272 |
| ISSN: | 1350-911X 0013-5194 |
| DOI: | 10.1049/el.2017.1413 |
| Popis: | The electronic properties of the junction formed between multi-nanolayer amorphous selenium and silicon are studied. The current–voltage (I–V) relationship of this type of junction was characterised and the result showed pn junction rectification. Capacitance–voltage (C–V) measurements were also used to obtain the value of the diffusion potential of the junction. From these data, the ideality factor and built-in potential were evaluated. The results show potential in the application of amorphous selenium and silicon as materials in tandem photovoltaic cells and in wide spectral range photodetectors. |
| Databáze: | OpenAIRE |
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