Improvement of optical and electrical properties of Boron-doped ZnO films by ITO buffer layers for photovoltaic application
| Autor: | Chun-Heng Chen, Kuen-Yi Wu, Chien-Liang Wu, Chien-Fu Huang, Hung-Jen Yang, Chia-Ming Fan, Chien-Hsun Chen, Jenn-Chang Hwang |
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| Rok vydání: | 2014 |
| Předmět: |
Diffraction
Materials science business.industry General Chemical Engineering Oxide chemistry.chemical_element Nanotechnology General Chemistry Chemical vapor deposition Buffer (optical fiber) Grain size law.invention chemistry.chemical_compound chemistry law Solar cell Optoelectronics business Short circuit Indium |
| Zdroj: | Journal of the Taiwan Institute of Chemical Engineers. 45:3016-3020 |
| ISSN: | 1876-1070 |
| Popis: | Boron-doped ZnO (BZO) films were deposited by low pressure chemical vapor deposition (LPCVD) on glass substrates with tin-doped indium oxide (ITO) buffer layers varying from 0 to 100 nm in thickness. The effects of ITO thickness on the structural, optical and electrical properties of BZO/ITO stacks were investigated. The sheet resistances of BZO/ITO stacks were decreased with increasing of ITO thickness while haze factors for BZO/ITO stacks were saturated at an ITO thickness of 50 nm. X-ray diffraction spectra indicate that ITO (2 2 2) can promote the preferred orientation of BZO films changing from 〈1 1 0〉 to 〈1 0 0〉. The grain size of the BZO films with ITO buffer layers was larger than that of those without ITO buffer layers. The simulated short circuit current of the silicon thin film solar cell when using BZO/ITO stacks as the TCO layers can be increased by a factor of 1.06 at an ITO thickness of 100 nm. |
| Databáze: | OpenAIRE |
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