Incoherent tunnelling of positive muons and trapping by vacancies in electron-irradiated aluminium
| Autor: | H. Orth, K. P. Döring, S. Liebke, M. Krauth, Alfred Seeger, W. Jacobs, N. Haas, Hans-Eckhardt Schaefer, H. Metz, K. P. Arnold, M. Gladisch, D. Herlach |
|---|---|
| Rok vydání: | 1984 |
| Předmět: |
Nuclear and High Energy Physics
Condensed matter physics Chemistry Electron Trapping Condensed Matter Physics Thermal diffusivity Crystallographic defect Atomic and Molecular Physics and Optics Tunnel effect Vacancy defect Irradiation Physical and Theoretical Chemistry Atomic physics Quantum tunnelling |
| Zdroj: | Hyperfine Interactions. 17:219-224 |
| ISSN: | 1572-9540 0304-3843 |
| DOI: | 10.1007/bf02065905 |
| Popis: | We have measured the transverse spin relaxation of positive muonsμ+ in Al single crystals after irradiation at 150 K with 3 MeV electrons. The relaxation functions agree with those expected for diffusion-limited trapping of theμ+ in monovacancies. Between 215 K and 60 K theμ+ diffusivity is well described by the Flynn-Stoneham law (multi-phonon incoherent tunnelling between ground states) with an activation enthalpyHa = (30±2) meV. At lower temperatures, few-phonon (in particular one-phonon) processes become important. The decrease of the vacancy concentration by a factor of 100 during annealing between 227 K and 267 K has been studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink