Design, Package, and Hardware Verification of a High-Voltage Current Switch
Autor: | Adam Morgan, Ankan De, Douglas C. Hopkins, Xin Zhao, Vishnu Mahadeva Iyer, Kasunaidu Vechalapu, Haotao Ke, Subhashish Bhattacharya |
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Rok vydání: | 2018 |
Předmět: |
Materials science
020208 electrical & electronic engineering 05 social sciences Energy Engineering and Power Technology Schottky diode 02 engineering and technology Insulated-gate bipolar transistor Die (integrated circuit) Anode Inductance Parasitic element 0202 electrical engineering electronic engineering information engineering Electronic engineering 0501 psychology and cognitive sciences Electrical and Electronic Engineering 050107 human factors Voltage Diode |
Zdroj: | IEEE Journal of Emerging and Selected Topics in Power Electronics. 6:441-450 |
ISSN: | 2168-6785 2168-6777 |
DOI: | 10.1109/jestpe.2017.2727051 |
Popis: | This paper demonstrates various electrical and package design considerations in series connecting a high-voltage (HV) silicon (Si)-IGBT (6500-V/25-A die) and a silicon carbide-junction barrier Schottky diode (6500-V/25-A die) to form an HV current switch. The effects of connecting the cathode of the series diode to an IGBT collector, versus connecting the IGBT emitter to the anode of the series diode, are analyzed in regards to minimizing the parasitic inductance. An optimized package structure is discussed and an HV current switch module is custom fabricated in the laboratory. An HV double pulse test circuit is used to verify the switching performance of the current switch module. Low-voltage and HV converter prototypes are developed and tested to ensure thermal stability of the same. The main motivation of this paper is to enumerate detailed design considerations for packaging an HV current switch. |
Databáze: | OpenAIRE |
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