Charge transfer at aluminum-C60interfaces in thin-film multilayer structures
| Autor: | Yoshihiro Iwasa, R. M. Fleming, J. H. Marshall, R. H. Eick, K. B. Lyons, Chang-Beom Eom, Julia M. Phillips, D. H. Rapkine, Robert C. Haddon, Arthur F. Hebard, Gordon A. Thomas |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Physical Review B. 50:17740-17743 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.50.17740 |
| Popis: | Thin-film multilayer structures with up to 20 repeat layers have been grown in a high-vacuum chamber by sequential deposition of aluminum (Al) and fullerene (${\mathrm{C}}_{60}$) onto room-temperature substrates. The periodicity of the layers is confirmed by x-ray-diffraction and in situ resistance measurements. The presence of underlying layers of ${\mathrm{C}}_{60}$ reduces the critical thickness at which Al becomes conducting from \ensuremath{\sim}35 to \ensuremath{\sim}20 \AA{}. In addition, there is a sudden increase in resistance that occurs when each Al layer is covered by a monolayer of ${\mathrm{C}}_{60}$. These observations, together with the measurement of a downward shift in frequency of a considerably broadened Raman-active ${\mathit{A}}_{\mathit{g}}$(2) pentagonal-pinch mode, imply that up to six electrons per ${\mathrm{C}}_{60}$ are transferred from the Al to the ${\mathrm{C}}_{60}$ layer. This demonstration of charge transfer across planar metal-${\mathrm{C}}_{60}$ interfaces suggests that multilayers may be a useful vehicle for forming fullerene interface compounds in two-dimensional structures. |
| Databáze: | OpenAIRE |
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