Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's
| Autor: | M. J. Kao, Yue-Huei Wu, Tien-Yih Lin, Wei-Chou Hsu, R. T. Hsu, H. M. Shieh |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Delta
Materials science business.industry Transconductance Transistor Doping Computer Science::Software Engineering Linearity Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials law.invention Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry law Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 43:1181-1186 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.506766 |
| Popis: | GaAs field-effect transistors (FET's) utilizing multiple /spl delta/-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-/spl delta/-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-/spl delta/-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like /spl delta/-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-/spl delta/-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 /spl mu/m. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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