Ultra-low transparency current density of strained quantum well lasers by coupling with n-type δ-doped layer
| Autor: | D. Fekete, O. Buchinsky, R. Sarfaty, M. Blumin |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
inorganic chemicals
Coupling Materials science business.industry Doping technology industry and agriculture social sciences Laser law.invention Condensed Matter::Materials Science law Quantum dot laser Condensed Matter::Superconductivity Optoelectronics lipids (amino acids peptides and proteins) Condensed Matter::Strongly Correlated Electrons Transparency (data compression) business human activities Layer (electronics) Current density Quantum well |
| Zdroj: | Conference Digest. 15th IEEE International Semiconductor Laser Conference. |
| DOI: | 10.1109/islc.1996.553740 |
| Popis: | By using a combination of a single strained quantum well with a n-type /spl delta/-doped layer, the transparency current density of the laser was lowered. It was achieved without increasing the internal losses, in contrast with a uniformly doped active area. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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