Spin-on metal oxide materials with high etch selectivity and wet strippability
| Autor: | YoungJun Her, SungEun Hong, Claire Petermann, Douglas Mckenzie, Joonyeon Cho, Elizabeth Wolfer, Munirathna Padmanaban, Dalil Rahman, Huirong Yao, Salem K. Mullen |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Oxide chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Nitride 021001 nanoscience & nanotechnology 01 natural sciences Metal chemistry.chemical_compound Atomic layer deposition Optical coating Semiconductor chemistry Chemical engineering visual_art 0103 physical sciences visual_art.visual_art_medium 0210 nano-technology business |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process. |
| Databáze: | OpenAIRE |
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