Impact of stacking order on the microstructural properties of Cu2ZnGeSe4 thin film absorber layer
| Autor: | Mukul Gupta, G. Hema Chandra, Y.P. Venkata Subbaiah, G. Swapna Mary, M. Anantha Sunil, R. Prasada Rao |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Band gap Stacking Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electron beam physical vapor deposition symbols.namesake Stack (abstract data type) Phase (matter) 0103 physical sciences symbols General Materials Science Electrical and Electronic Engineering Thin film 0210 nano-technology Raman spectroscopy Ternary operation |
| Zdroj: | Superlattices and Microstructures. 117:437-448 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2018.03.065 |
| Popis: | Six possible multiple stacks of Cu-ZnSe-Ge with selenium incorporation at a precursor stage were prepared using electron beam evaporation followed by vacuum selenization at 475 °C for 30 min to investigate the role of stacking order on the growth and properties of Cu2ZnGeSe4 films. The X-ray diffraction measurements affirm the existence of various binary and ternary phases (ZnSe, Cu2Se, GeSe2 and Cu2GeSe3) for all the precursor stacks. These phases are completely diminished after selenization at 475 °C except a minor co-existence of ZnSe (111) phase along with dominant Cu2ZnGeSe4 (112) phase for stack A: (Cu/Se/ZnSe/Se/Ge/Se) × 4. The Raman measurements for selenized multiple stack A, revealed two major A3, A1 modes at 206 cm−1 and 176 cm−1 and one minor E5 mode at 270 cm−1 corresponding to CZGSe phase. The surface morphology and the elemental distribution across the thickness found to vary significantly with the change of stacking order. The selenized multiple stacks A films shows densely packed flake and capsule shaped grains. The selenized stack A found to have a direct energy band gap of 1.60 eV, showing p-type conductivity with a Hall mobility of 22 cm2 (Vs)−1. |
| Databáze: | OpenAIRE |
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