Numerical Study of JAM-GS-GAA FinFET: A Fin Aspect Ratio Optimization for Upgraded Analog and Intermodulation Distortion Performance

Autor: Bhavya Kumar, Rishu Chaujar
Rok vydání: 2021
Předmět:
Zdroj: Silicon. 14:309-321
ISSN: 1876-9918
1876-990X
DOI: 10.1007/s12633-021-01395-8
Popis: This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded static, analog, and distortion performance. The crucial static and analog parameters, for instance, electric field, potential, band diagram, electron concentration, transconductance, quality factor, drain current, early voltage, intrinsic gain, output resistance, and output conductance, are evaluated and analyzed. The simulated results reveal that the static and analog performance of JAM-GS-GAA FinFET enhances with the increase in the fin AR. Besides, linearity and distortion parameters like voltage intercept points (VIP2, VIP3), 1-dB compression point, zero crossover point, harmonic distortions (HD2, HD3), and total harmonic distortion are explored. It has been noticed that a low fin AR lessens the distortion in the device and improves the device’s linearity performance. Moreover, the zero crossover point decreased significantly for the device with low fin AR, which reduces the device operation optimum bias point. Thus, the findings of this paper can help engineers to design 3-D devices according to their needs.
Databáze: OpenAIRE
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