Optimization of buffer layers for lattice-mismatched epitaxy of GaxIn1−xAs/InAsyP1−y double-heterostructures on InP
| Autor: | Lynn Gedvilas, Steve Johnston, S. P. Ahrenkiel, R. K. Ahrenkiel, J. J. Carapella, Mark Wanlass |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Mineralogy Heterojunction Carrier lifetime Chemical vapor deposition Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Active layer chemistry.chemical_compound Semiconductor chemistry Indium phosphide Optoelectronics Thin film business |
| Zdroj: | Solar Energy Materials and Solar Cells. 91:908-918 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2007.02.008 |
| Popis: | We optimize InAs y P 1− y buffer layers and compositional grades for lattice-mismatched heteroepitaxy of Ga x In 1− x As/InAs y P 1− y double-heterostructures on InP. The strains of the active and buffer layers depend on the bulk misfit difference between these layers. The misfit difference is adjusted to eliminate strain in the active layer, thus avoiding misfit dislocations and surface topography that would otherwise form to relieve strain. The optimized structure uses an “overshoot” with respect to the conventional design in the misfit and As composition of the InAs y P 1− y buffer. Nearly optimized heterostructures typically show excellent structural quality and extended minority-carrier lifetimes. |
| Databáze: | OpenAIRE |
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