Photoelectrochemical Efficiency Applications of Antimony-doped Tin Oxide Thin Film by Thermal Evaporation Technique
| Autor: | P. Mohamed Anwar, S. Muruganantham, M. Ismail Fathima, A. Ayeshamariam, S. Beer Mohamed, M. Benhaliliba, K. Kaviyarasu |
|---|---|
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Asian Journal of Chemistry. 34:1537-1542 |
| ISSN: | 0975-427X 0970-7077 |
| Popis: | Antimony-doped tin oxide (ATO) Sb–SnO2 has been prepared by thermal evaporation technique on indium tin oxide (ITO) glass substrate. The prepared ATO thin film was characterized by X-ray diffraction technique (XRD), scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDAX), UV-vis’s spectrometer, Fourier transform infrared spectroscopy (FTIR) and photoluminescence studies (PLS) at room temperature, 250 and 500 ºC. Furthermore, the as-fabricated ATO/indium tin oxide device was subjected to electrical measurements, was determined at room temperature and 500 ºC without etching, chemical etching and photoetching processes. Post-treatment, such as annealing and etching, electrochemical photocurrent results showed that the maximum photoelectrochemical performance without etching at 500 ºC of the PEC cell. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|