Size effect in the electrical resistance of a ballistic point contact with single impurities
| Autor: | I. G. Tuluzov, Yu. A. Kolesnichenko, A. N. Omelyanchouk |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Condensed matter physics Contact resistance Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Metal Point contact Electrical resistance and conductance Impurity Condensed Matter::Superconductivity visual_art visual_art.visual_art_medium Condensed Matter::Strongly Correlated Electrons Electrical and Electronic Engineering |
| Zdroj: | Physica B: Condensed Matter. 218:73-76 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/0921-4526(95)00562-5 |
| Popis: | We calculate the effect of single impurities in a ballistic, normal metal point contact on the electrical resistance. Both the cases of ordinary and magnetic impurities are considered. For small point contact diameters d comparable with the average impurity—impurity distance r 0 the discreteness of impurity positions is taken into account. In a quasiclassical approximation, the expression for the contact resistance is obtained, which is valid for an arbitrary relation between d and r 0 . The dependence of the point contact resistance on the ratio d / r 0 is studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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