Transfer Doping in Diamond for Channel Doping and Electrical Contacts
Autor: | Shamus McNamara, Lucas Huddleston |
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Rok vydání: | 2021 |
Předmět: |
Materials science
business.industry Doping Transistor Diamond Substrate (electronics) engineering.material Electrical contacts Electronic Optical and Magnetic Materials law.invention law engineering Optoelectronics Field-effect transistor Work function Electrical and Electronic Engineering business Layer (electronics) |
Zdroj: | IEEE Transactions on Electron Devices. 68:4231-4236 |
ISSN: | 1557-9646 0018-9383 |
DOI: | 10.1109/ted.2021.3100017 |
Popis: | This article reports on the use of transfer doping (TD) to create holes in a diamond substrate using defects in Al2O3 that are located at an energy below the top of the diamond valence band. The energy bands of a metal–Al2O3–diamond structure are analyzed for use as a method to make electrical contact to the diamond. The structure is also analyzed for use as part of a field-effect transistor, where the metal acts as the gate. While it is found that the metal can easily dominate the charges in a thin Al2O3 layer, preventing efficient TD of the diamond, we found that the use of a thick Al2O3 layer, a high defect density, or a high work function metal can all serve to permit efficient TD. It is shown that a metal–Al2O3–diamond structure, utilizing a high defect density in a few nm thick Al2O3 layer, can provide a good electrical contact to the diamond because electrons can tunnel through the Al2O3 layer and because a high hole concentration is formed under the metal contact in the diamond substrate. |
Databáze: | OpenAIRE |
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