Development of trilayer mask etching for fabrication of high aspect ratio structures

Autor:	Vladimir Bliznetsov, Kelvin Loh Wei Loong
Rok vydání:	2019
Předmět:	Fabrication Silicon business.industry chemistry.chemical_element Plasma law.invention Anti-reflective coating chemistry Etching (microfabrication) law Microelectronics Optoelectronics Process window business Immersion lithography
Zdroj:	2019 Electron Devices Technology and Manufacturing Conference (EDTM).
Popis:	We studied etching processes for silicon antireflective coating (SiARC) and spin-on-carbon (SOC) layers which are used in trilayer patterning approach with 193 nm ArF immersion lithography. Etching processes have been performed with novel gas chemistries in industrial ICP chambers. Based on process window study, the processes have been optimized and used for fabrication of high aspect ratio silicon pillars for flat optics devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::357848f77cdcf5c0db09b810b5d6b69c https://doi.org/10.1109/edtm.2019.8731283 Zobrazit plný text záznamu