Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substrates
| Autor: | P.D. Dapkus, Yong Cheng, Hanmin Zhao, M.H. MacDougal, Gye-Mo Yang, K. Uppal |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
business.industry Physics::Optics Heterojunction Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Atomic and Molecular Physics and Optics law.invention Gallium arsenide chemistry.chemical_compound Optics chemistry law Quantum dot laser Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Tunable laser Quantum well |
| Zdroj: | IEEE Journal of Selected Topics in Quantum Electronics. 1:196-202 |
| ISSN: | 1077-260X |
| DOI: | 10.1109/2944.401197 |
| Popis: | High performance buried heterostructure InGaAs-GaAs-AlGaAs quantum-well lasers and laser arrays with tight spatial confinement of the electrical current and the optical fields have been fabricated by metalorganic chemical vapor deposition. The lasers ace fabricated in a single growth step, using nonplanar substrates as a template for the active region definition. CW room temperature threshold currents, as low as 0.5 mA and 0.6 mA, are obtained for as-cleaved double and single quantum-well lasers, respectively. External quantum efficiencies exceeding 80% are obtained in the same devices. High-reflectivity facet-coated lasers have room temperature CW threshold currents as low as 0.145 mA with 10% external quantum efficiency. Lasers made by this technique have high yield and uniformity, and are suitable for low threshold array applications. > |
| Databáze: | OpenAIRE |
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