Ion‐implanted silicon profiles in GaAs
| Autor: | D. H. Lee, R. M. Malbon |
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| Rok vydání: | 1977 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 30:327-329 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.89386 |
| Popis: | Depth distribution profiles of silicon impurities implanted at 50 to 500 keV have been measured by secondary‐ion mass spectrometry. The as‐implanted profiles are approximately Gaussian with agreement between experiment and theory better than 10% for the projected ranges Rp and within 20% for the standard deviations ΔRp. Negligible diffusion of a 400‐keV implanted silicon profile is observed after a 800 °C 20‐min anneal in a flowing hydrogen/arsenic atmosphere without dielectric encapsulation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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