Ultrafast semiinsulating InP:Fe-InGaAs:Fe-InP:Fe MSM photodetectors: modeling and performance
| Autor: | E.H. Bottcher, T. Wolf, F. Hieronymi, Dieter Bimberg, E. Droge, D. Kuhl |
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| Rok vydání: | 1992 |
| Předmět: |
Physics
business.industry Scattering Detector Photodetector Condensed Matter Physics Network analyzer (electrical) Atomic and Molecular Physics and Optics Computational physics symbols.namesake Maxwell's equations symbols Optoelectronics Equivalent circuit Field-effect transistor Parasitic extraction Electrical and Electronic Engineering business |
| Zdroj: | IEEE Journal of Quantum Electronics. 28:2343-2357 |
| ISSN: | 0018-9197 |
| DOI: | 10.1109/3.159541 |
| Popis: | The response of InGaAs metal-semiconductor-metal (MSM) detectors as a function of all relevant detector parameters is investigated experimentally and theoretically. The calculations of the intrinsic detector response are carried out by taking fully into account the two-dimensional character of the problem. The generalized Ramo theorem is applied to obtain the induced current, which is the only measurable quantity. The calculations clearly demonstrate the distinct contributions of electrons and holes to the response. The extrinsic response is derived taking parasitics, which are obtained in different ways, into account. A full-wave analysis of the detector circuit, solving Maxwell equations, is performed. The resulting S/sub 11/ scattering parameter is measured by means of a network analyzer. Fitting of the calculated and measured S/sub 11/ parameters to an equivalent circuit diagram yields the values of the parasitic elements. Perfect agreement between calculated and measured data is found. > |
| Databáze: | OpenAIRE |
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