Effect of annealing on the properties of Ga 2 O 3 :Mg films prepared on α-Al 2 O 3 (0001) by MOCVD
| Autor: | Xianjin Feng, Wei Mi, Zhao Li, Jin Ma |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Band gap Doping Analytical chemistry 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Amorphous solid Crystallography 0103 physical sciences Atomic ratio Crystallite Metalorganic vapour phase epitaxy 0210 nano-technology Instrumentation |
| Zdroj: | Vacuum. 124:101-107 |
| ISSN: | 0042-207X |
| Popis: | The Mg-doped Ga2O3 (Ga2O3:Mg) films have been prepared on the α-Al2O3(0001) substrates by metalorganic chemical vapor deposition (MOCVD). The Mg doping was varied from 0 to 10% (atomic ratio). The effect of annealing on the structural, electrical and optical properties of the films was investigated in detail. After annealing, the 0–3% Mg-doped films changed from amorphous to polycrystalline structure of monoclinic β-Ga2O3 with a single orientation along the ( 2 ¯ 01 ) direction, while no obvious phase transition was observed for the rest of the samples. The average transmittances for the Ga2O3:Mg films in the visible range were over 90%, with an obvious increase observed in the ultraviolet (UV) region around 300 nm after annealing. Tunable optical band gap from 4.96 to 5.4 eV was obtained before annealing, which varied in a different range of 4.88–5.36 eV after annealing. |
| Databáze: | OpenAIRE |
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