Effect of Mo and MoTi Serving as a Barrier Layer for Cu Source/Drain Electrodes on Performances of Amorphous Silicon and IGZO TFTs

Autor:	Chuanbao Luo, Qianyi Zhang, Ziran Li, Xuechao Ren, Xiaolong Meng, Dai Tian, Bisheng Mo, Xiaohu Wei, Xialiang Yuan, Shijian Qin
Rok vydání:	2019
Předmět:	Amorphous silicon Barrier layer chemistry.chemical_compound Materials science chemistry business.industry Electrode Optoelectronics General Medicine business
Zdroj:	Proceedings of the International Display Workshops. :541
ISSN:	1883-2490
DOI:	10.36463/idw.2019.0541
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::35510b7459b694a7c9c58a0e301572c1 https://doi.org/10.36463/idw.2019.0541 Zobrazit plný text záznamu