Electrical Properties of Thin In2O3/C Films
| Autor: | I. V. Babkina, A. V. Sitnikov, V. A. Makagonov, Yu. E. Kalinin, O. V. Zhilova, M. N. Volochaev, S. Yu. Pankov |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry General Chemical Engineering Metals and Alloys Atmospheric temperature range Nanocrystalline material Inorganic Chemistry Atomic layer deposition Semiconductor Amorphous carbon Chemical engineering Sputtering Materials Chemistry Thin film business Temperature coefficient |
| Zdroj: | Inorganic Materials. 56:374-381 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s0020168520040019 |
| Popis: | We have studied the structure and electrical properties of thin films based on the In2O3 semiconductor and carbon, grown by atomic layer deposition using ion-beam sputtering. The structure of the resultant materials, formed during layer-by-layer growth of island layers, is made up of nanocrystalline In2O3 granules distributed at random over amorphous carbon. The electrical transport properties of the In2O3/C thin films depend on their thickness. In the temperature range 80–300 K, the dominant electrical transport mechanism in the In2O3/C thin films of thickness h 70 nm undergo a change from conduction associated with strong carrier localization to that due to the presence of percolation clusters formed by In2O3 nanocrystals, which shows up as a linear temperature dependence of conductivity, with a negative temperature coefficient. |
| Databáze: | OpenAIRE |
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