The deformation regimes of the yield point of silicon
| Autor: | Hans Siethoff, H. G. Brion |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
010302 applied physics
Range (particle radiation) Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Silicon Orders of magnitude (temperature) Doping Metals and Alloys chemistry.chemical_element 02 engineering and technology Deformation (meteorology) Strain rate 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Small strain Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Crystallography chemistry 0103 physical sciences General Materials Science Point (geometry) 0210 nano-technology |
| Zdroj: | Philosophical Magazine A. 81:145-152 |
| ISSN: | 1460-6992 0141-8610 |
| DOI: | 10.1080/01418610108216624 |
| Popis: | The upper yield point of undoped floating-zone silicon has been investigated. The measurements were performed on dislocation-free single crystals deformed at temperatures between 800 and 1300°C and a strain-rate range extending over three orders of magnitude. The upper yield point emerges up to 1250°C. In principle, the data reflect the behaviour of the lower yield point, thus confirming the existence of a novel deformation regime of silicon at high temperatures and small strain rates. There are, however, features which resemble the behaviour of highly doped material to some extent. This surprising similarity raises questions concerning the interpretation of the different deformation regimes observed in undoped and doped silicon. |
| Databáze: | OpenAIRE |
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