A Method for Fabricating Practically Channel-Corner-Free Polycrystalline Silicon Thin-Film Transistors
| Autor: | Chi Won Ahn, Hyun-Sang Seo, Seung-Ki Joo, Wook-Jung Hwang, Il-Suk Kang, Jun-Mo Yang, Young-Su Kim, Nam-Kyu Song, Cheol-Ho Park |
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| Rok vydání: | 2011 |
| Předmět: |
Organic electronics
Fabrication Materials science Silicon business.industry Transistor Electrical engineering chemistry.chemical_element engineering.material Electronic Optical and Magnetic Materials Active matrix law.invention Polycrystalline silicon chemistry law Thin-film transistor engineering Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Transactions on Electron Devices. 58:271-275 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | The influences of metal-induced laterally crystallized silicon channel corners on the performance and reliability of thin-film transistors (TFTs) were investigated. It was found that the TFT with the channel width, mostly applied to active matrix organic light-emitting diodes, had weak immunity to electrical stresses because of the heaviest weight of silicide-rich channel corner on the channel width by the geometric effect. The proposed TFT fabrication, which is composed of two consecutive adjacent step switches, makes TFTs practically channel-corner-free, resulting in high reliability. Moreover, it enables TFTs to have more current flow paths that maintain a high performance. |
| Databáze: | OpenAIRE |
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