GaN-based high-temperature and radiation-hard electronics for harsh environments
| Autor: | Toshiro Hatake, Manuel Gallegos, Kyung-Ah Son, William D. Smythe, Leif Scheick, Gerald Lung, Anna Liao, Richard D. Harris |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Gate dielectric Transistor Gallium nitride Hardware_PERFORMANCEANDRELIABILITY law.invention chemistry.chemical_compound Semiconductor chemistry Hardware_GENERAL Gate oxide law Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Electronics business Radiation hardening Hardware_LOGICDESIGN |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semiconductor (MOS) transistors that are targeted for 500 (sup o)C operation and >2 Mrad radiation hardness. For the target device performance, we develop Schottky-free AlGaN/GaN MOS transistors, where a gate electrode is processed in a MOS layout using an Al2O3 gate dielectric layer.... |
| Databáze: | OpenAIRE |
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