Low magnetic damping in an ultrathin CoFeB layer deposited on a 300 mm diameter wafer at cryogenic temperature
Autor: | Atsushi Sugihara, Tomohiro Ichinose, Shingo Tamaru, Tatsuya Yamamoto, Makoto Konoto, Takayuki Nozaki, Shinji Yuasa |
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Rok vydání: | 2023 |
Předmět: | |
Zdroj: | Applied Physics Express. 16:023003 |
ISSN: | 1882-0786 1882-0778 |
DOI: | 10.35848/1882-0786/acbae1 |
Popis: | We deposited an ultrathin CoFeB(1.1 nm) layer, which functions as a storage layer of MgO-based magnetic tunnel junctions for spin-transfer-torque (STT) magnetoresistive random-access memory (MRAM), on ϕ300 mm wafers at 100 K and investigated its effect on the magnetization dynamics of CoFeB. We observed clear reductions in both the inhomogeneous linewidth and total magnetic damping parameter for the CoFeB layer deposited at 100 K compared to those deposited at 300 K through the improvement in the interfacial quality. The results show that deposition at cryogenic temperatures is an effective manufacturing process for high-quality magnetic thin films with low magnetic damping. |
Databáze: | OpenAIRE |
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