Low magnetic damping in an ultrathin CoFeB layer deposited on a 300 mm diameter wafer at cryogenic temperature

Autor: Atsushi Sugihara, Tomohiro Ichinose, Shingo Tamaru, Tatsuya Yamamoto, Makoto Konoto, Takayuki Nozaki, Shinji Yuasa
Rok vydání: 2023
Předmět:
Zdroj: Applied Physics Express. 16:023003
ISSN: 1882-0786
1882-0778
DOI: 10.35848/1882-0786/acbae1
Popis: We deposited an ultrathin CoFeB(1.1 nm) layer, which functions as a storage layer of MgO-based magnetic tunnel junctions for spin-transfer-torque (STT) magnetoresistive random-access memory (MRAM), on ϕ300 mm wafers at 100 K and investigated its effect on the magnetization dynamics of CoFeB. We observed clear reductions in both the inhomogeneous linewidth and total magnetic damping parameter for the CoFeB layer deposited at 100 K compared to those deposited at 300 K through the improvement in the interfacial quality. The results show that deposition at cryogenic temperatures is an effective manufacturing process for high-quality magnetic thin films with low magnetic damping.
Databáze: OpenAIRE