High luminescent Eu3 and Tb3 doped SnO2 sol–gel derived films deposited on porous silicon

Autor:	J.A. Roger, Habib Elhouichet, M. Ferid, Meherzi Oueslati, Bruno Canut, A. Moadhen
Rok vydání:	2003
Předmět:	Materials science Photoluminescence Silicon Doping Analytical chemistry chemistry.chemical_element Mineralogy Terbium Condensed Matter Physics Porous silicon Tin oxide Electronic Optical and Magnetic Materials chemistry Tin Europium
Zdroj:	physica status solidi (a). 197:350-354
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.200306523
Popis:	Tin oxide doped with europium (SnO 2 : Eu 3+ ) or doped with europium and terbium (SnO 2 : (Eu 3+ + Tb 3+ )), prepared from the sol-gel technique, is incorporated into luminescent porous silicon (PS) layers. Rutherford Backscattering (RBS) measurements reveal a complete and uniform penetration of tin, oxygen, and rare earth into the PS layer. Photoluminescence (PL) studies show that the PL peaks of rare earth are superposed to the PL band of the PS. It has been found that the recovered PL signal of the PS band is improved by adding Eu 3+ to the SnO 2 sol and is further improved by adding Eu 3+ and Tb 3+ . We show that a process of excitation transfer occurs from Eu 3+ and Tb 3+ to Si nanocrystallites.
Databáze:	OpenAIRE
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