Electric Breakdown in Nitride PN Junctions

Autor:	Vladimir A. Dmitriev, N.I. Kuznetsov, K. G. Irvine, C.H. Carter
Rok vydání:	1995
Předmět:	Materials science business.industry Etching (microfabrication) Optoelectronics Breakdown voltage Electric potential Metalorganic vapour phase epitaxy Chemical vapor deposition Nitride Reactive-ion etching business Current density
Zdroj:	MRS Proceedings. 395
ISSN:	1946-4274 0272-9172
Popis:	Electric breakdown of mesa terminated GaN and AlGaN pn diodes was investigated. The nitride pn structures were grown on 6H-SiC (0001) wafers by metalorganic chemical vapor deposition (MOCVD). Mesa structures were fabricated by reactive ion etching (RIE). Capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the pn junctions were measured. It was found that the junctions were linearly graded. Microplasmic breakdown was observed. The breakdown voltage for GaN and AlGaN diodes ranged from 40 to 150 V and from 40 to 100 V, respectively. The electric breakdown field and temperature coefficient of the breakdown voltage were measured.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3513bedbaf08e4d980a8072642fb2627 https://doi.org/10.1557/proc-395-909 Zobrazit plný text záznamu Full text from SpringerLink