Lifshitz topological transitions, induced by doping and deformation in single-crystal bismuth wires
| Autor: | Gh. Para, L. Konopko, A. K. Kobylianskaya, Albina Nikolaeva, Tito E. Huber |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Doping General Physics and Astronomy chemistry.chemical_element Fermi surface 02 engineering and technology Electron 021001 nanoscience & nanotechnology Topology 01 natural sciences Shubnikov–de Haas effect Bismuth Condensed Matter::Materials Science chemistry Condensed Matter::Superconductivity 0103 physical sciences Condensed Matter::Strongly Correlated Electrons Deformation (engineering) 010306 general physics 0210 nano-technology Tin Single crystal |
| Zdroj: | Low Temperature Physics. 43:257-263 |
| ISSN: | 1090-6517 1063-777X |
| Popis: | The features associated with the manifestation of Lifshitz electron topological transitions (ETT) in glass-insulated bismuth wires upon qualitative changes to the topology of the Fermi surface are investigated. The variation of the energy spectrum parameters was implemented by doping Bi with an acceptor impurity Sn and using elastic strain of up to 2%, relative to the elongation in the weakly-doped p-type Bi wires. Pure and doped glass-insulated single-crystal bismuth with different diameters and (1011) orientations along the axis were prepared by the Ulitovsky liquid phase casting method. For the first time, ETT-induced anomalies are observed along the temperature dependences of the thermoemf α(T) as triple-changes of the α sign (given heavy doping of Bi wires with an acceptor impurity Sn). The concentration and energy position of the Σ-band given a high degree of bismuth doping with Sn was assessed using the Shubnikov-de Haas effect oscillations, which were detected both from L-electrons and from T-hole... |
| Databáze: | OpenAIRE |
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