Nanowire growth and dopants studied by cross-sectional scanning tunnelling microscopy

Autor:	Lassana Ouattara, Niklas Sköld, Anders Mikkelsen, Edvin Lundgren
Rok vydání:	2006
Předmět:	Materials science Dopant Mechanics of Materials Mechanical Engineering Microscopy Nanowire General Materials Science Bioengineering Nanotechnology General Chemistry Substrate (electronics) Electrical and Electronic Engineering Quantum tunnelling
Zdroj:	Nanotechnology. 17:S362-S368
ISSN:	1361-6528 0957-4484
Popis:	Using a crystalline embedding scheme it has recently become possible to study free-standing III–V nanowires with cross-sectional scanning tunnelling microscopy (XSTM). In the present paper we discuss how this novel method can be used for direct atomically resolved imaging of the interior of nanowires. We will focus in particular on two areas where this method provides unique possibilities. First we discuss the growth of the nanowire at the substrate as studied by XSTM and determine the facets of the nanowire growth on the surface and at the onset of free-standing nanowire growth. Second, we demonstrate how individual defects can be studied inside the wires, indicating a unique way for investigating dopant structures and concentrations in nanowires. We identify a carbon defect/dopant in the nanowire positioned on arsenic sites and establish quantitative limits on the defect density in the nanowires.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::350844459e8fcb1cac5f78659b7fdc20 https://doi.org/10.1088/0957-4484/17/11/s22 Zobrazit plný text záznamu