PREPARATION AND CHARACTERIZATION OF In2O3 THIN FILMS FOR OPTOELECTRONIC APPLICATIONS

Autor:	Khalid Z. Yahya, Omar A. Abdulrazaq, Raid A. Ismail
Rok vydání:	2005
Předmět:	Thermal oxidation Materials science business.industry Band gap Annealing (metallurgy) Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Carbon film Materials Chemistry Optoelectronics Figure of merit Direct and indirect band gaps Thin film business Sheet resistance
Zdroj:	Surface Review and Letters. 12:515-518
ISSN:	1793-6667 0218-625X
DOI:	10.1142/s0218625x05007359
Popis:	Conductive transparent In 2 O 3 thin films with (222)-preferred orientation were prepared by rapid thermal oxidation (RTO) in static air of indium thin films at condition 200°C/30 s. Detailed structural, electrical, and optical characteristics of the film are presented. The data are interpreted to give a direct bandgap of 3.6 eV and indirect bandgap of 2.5 eV. The grown In 2 O 3 films exhibited high figure of merit and sheet resistance as low as 20 Ω/sq. in the absence of any post-deposition annealing conditions. The mobility of these films was estimated to be 31 cm2 · V-1 · s-1. These results are compared with those of In 2 O 3 films prepared by other methods.
Databáze:	OpenAIRE
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