A 0.45–1 V Fully-Integrated Distributed Switched Capacitor DC-DC Converter With High Density MIM Capacitor in 22 nm Tri-Gate CMOS
| Autor: | Vivek De, Stephen Kim, Bibiche M. Geuskens, Rinkle Jain, Muhammad M. Khellah, James W. Tschanz, Jaydeep P. Kulkarni |
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| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | IEEE Journal of Solid-State Circuits. 49:917-927 |
| ISSN: | 1558-173X 0018-9200 |
| DOI: | 10.1109/jssc.2013.2297402 |
| Popis: | A fully integrated switched capacitor voltage regulator (SCVR) with on-die high density MIM capacitor, distributed across a 14 KB register file (RF) load is demonstrated in 22 nm tri-gate CMOS. The multi-conversion-ratio SCVR provides a wide output voltage range of 0.45-1 V from a fixed input voltage of 1.225 V. It achieves 63-84% conversion efficiency and supports a maximum load current density of 0.88 A/mm2. The area overhead of the dedicated SCVR on the load is 3.6%. Measured data is presented on various performance indices in detail. Subsequent learning on tradeoffs between various factors like capacitance characteristics, conversion efficiency and current density are delineated and, correlated with theoretical estimates. Performance of RF array shows comparable results when powered with the SCVR and the external rail. The all-digital, modular design allows efficient spatial distribution across the load and hence robust power delivery. The extremely fast response times in the order of few nanoseconds is targeted to benefit agile power management. This work evinces voltage regulator technology as a standard homogenous CMOS component, which can proliferate DVFS domains for maximum energy and area benefits. |
| Databáze: | OpenAIRE |
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