GaN for space application: almost ready for flight

Autor:	Do Minh Nhut, M. Feudale, O. Vendier, Guillaume Nicolas, J.-L. Muraro, S. Rochette, D. Langrez, Jean-Louis Cazaux, Stéphane Forestier
Rok vydání:	2010
Předmět:	Power capability business.industry Computer science Amplifier Transistor Electrical engineering Gallium nitride law.invention Low noise chemistry.chemical_compound Microwave electronics chemistry law Power semiconductor device Electronics Electrical and Electronic Engineering business
Zdroj:	International Journal of Microwave and Wireless Technologies. 2:121-133
ISSN:	1759-0795 1759-0787
Popis:	On the last years, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics. Power transistors are now available. How this GaN technology would impact space-borne units is now a priority concern. Although the power capability of GaN technology is the first obvious profit, GaN could also be used for other applications like low noise amplifiers, mixers, and probably more. The high sustainable temperature of GaN transistors is most striking advantage for in-flight use. This is connected to packaging design which is also experiencing a lot of activities and quick progresses. Of course, space application is dependent upon the full demonstration of reliability and this constitutes another field of investigation. Finally, after 8 years of GaN studies, experimental results are presented: they open wide the road a revolution inside space-borne electronics: the rise of GaN.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::34f8f5e014371ea0f7f5bf0eee07be12 https://doi.org/10.1017/s1759078710000206 Zobrazit plný text záznamu