Voltage-controlled DC reactive magnetron sputtering of indium-doped zinc oxide films

Autor:	A. Brudnik, M. Jachimowski, E Kolawa, H. Czternastek
Rok vydání:	1992
Předmět:	Acoustics and Ultrasonics Doping Analytical chemistry chemistry.chemical_element Biasing Zinc Condensed Matter Physics Cathode Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry law Sputtering Cavity magnetron Thin film Indium
Zdroj:	Journal of Physics D: Applied Physics. 25:865-870
ISSN:	1361-6463 0022-3727
DOI:	10.1088/0022-3727/25/5/019
Popis:	Transparent and conducting indium-doped zinc oxide (IZO) films were deposited by DC reactive magnetron sputtering from Zn+2.5 at.% In alloy target. Stabilization of the operating point in the transition region was achieved by means of controlling the cathode voltage. The discharge current and the argon flow were kept constant. The drift of the cathode voltage was compensated for by induced changes in the oxygen flow. Different values of cathode voltage were chosen within the range corresponding to the transition between metallic and reactive modes. It was found that there exists a correlation between the cathode voltage and the film composition. The changes in structural, electrical and optical parameters of IZO films with cathode voltage were also studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::34f26d69ceca238fda6b664de494a7c1 https://doi.org/10.1088/0022-3727/25/5/019 Zobrazit plný text záznamu