A reverse-channel, high-voltage lateral IGBT

Autor:	Deva Narayan Pattanayak, Michael S. Adler, T.P. Chow, Bantval Jayant Baliga
Rok vydání:	2002
Předmět:	Dynamic switching Materials science Current injection technique Large peak business.industry Electrical engineering Optoelectronics High voltage Insulated-gate bipolar transistor Limiting business Gate voltage Return channel
Zdroj:	Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
DOI:	10.1109/ispsd.1994.583647
Popis:	A novel reverse-channel lateral IGBT has been studied with numerical simulations and demonstrated experimentally for the first time. It exhibits a negative differential resistance (NDR) region, which is dependent on the gate voltage and has large peak to valley ratios (10 to >1000), in the I-V characteristics. Also, during dynamic switching, it has been shown to be self-current limiting and hence not to latch up.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::34ee8fd26c9b99c56af4359ce3e6f5f6 https://doi.org/10.1109/ispsd.1994.583647 Zobrazit plný text záznamu