| Autor: |
S. V. Demishev, N. Yu. Shitsevalova, Alexey Kuznetsov, A. V. Bogach, M.I. Ignatov, V. V. Glushkov, N. E. Sluchanko |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Physica B: Condensed Matter. 403:742-743 |
| ISSN: |
0921-4526 |
| DOI: |
10.1016/j.physb.2007.10.023 |
| Popis: |
Precision measurements of charge transport parameters and magnetization have been carried out on the high-quality single crystals of CeB 6 at temperatures 1.8–300 K. It is shown that in the temperature interval of 5 K T T *∼80 K the magnetic contribution in resistivity obeys the power law ρ m ∼ T −0.4 , which corresponds to the regime of weak localization of charge carriers. At the same temperatures an asymptotic behavior of thermopower S ∼ − ln T is found together with nearly constant and negative Hall coefficient R H ( T ) and an essential decrease of the charge carriers mobility μ H ( T )= R H ( T )/ ρ ( T ). Instead of the Curie–Weiss type dependence, an asymptotic form χ ( T ) ∼T −0.8 is obtained for susceptibility of CeB 6 in the range 15–300 K. Such a behavior of transport and magnetic characteristics contradict to the predictions of Kondo-lattice approach for this archetypal SCES. An alternative interpretation is developed at present study and based on (i) the itinerant paramagnetism and DOS renormalization at temperatures below T *∼80 K and (ii) realization of a complex H – T magnetic phase diagram, which is caused by a competition between SDW and 4f-antiferromagnetism in CeB 6 . |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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