Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation
| Autor: | Nihat Tuğluoğlu, Ümmühan Akın, Hande Karadeniz, Ö.F. Yüksel, Fatime Duygu Akgül, Serkan Eymur |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Gamma ray irradiation Schottky diode Condensed Matter Physics Thermal conduction 01 natural sciences Space charge Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 0103 physical sciences Optoelectronics Irradiation Electrical and Electronic Engineering Current (fluid) business Diode |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 32:15857-15863 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-021-06138-4 |
| Popis: | The current–voltage characteristics of Au/SnO2/n-Si Schottky diode before and after irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The effects of γ-ray irradiation on the main diode parameters have been studied. The forward bias ln(IF)–ln(VF) characteristics confirmed that the conduction mechanism is dominated by the space-charge limited current (SCLC) conduction. Also, the current transport mechanism of the Au/SnO2/n-Si Schottky diode has been examined through ln(IR)–VR1/2 characteristics, indicating that the Schottky emission dominates the current mechanism for 0 kGy and 10 kGy. |
| Databáze: | OpenAIRE |
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