Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
| Autor: | L. V. Krasilnikova, E. V. Skorohodov, P. A. Bushuykin, Boris A. Andreev, D. N. Lobanov, A. V. Novikov, Pavel A. Yunin |
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| Rok vydání: | 2016 |
| Předmět: |
Photoluminescence
Materials science Analytical chemistry Crystal growth 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Concentration ratio Crystallographic defect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystallography Absorption edge 0103 physical sciences 010306 general physics 0210 nano-technology Absorption (electromagnetic radiation) Molecular beam epitaxy |
| Zdroj: | Semiconductors. 50:261-265 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616020159 |
| Popis: | The results of investigations of the effect of the ratios of fluxes of the Group-III and -V elements on the structural and optical properties of an InN film deposited by plasma-assisted molecular-beam epitaxy (MBE) are presented. It is shown that the InN layer consists of free-standing nanocolumns at a flux ratio of III/V < 0.6. InN growth becomes two-dimensional (2D) in the ratio range 0.6 < III/V < 0.9; however, the InN layer has a nanoporous structure. Upon passage to metal-rich conditions of growth (III/V ∼1.1), the InN layer becomes continuous. The passage from 3D to 2D growth is accompanied by an increase in the threading-dislocation density. It results in a decrease in the photoluminescence (PL) intensity of InN at room temperature. The electron concentration in the InN layers amounts to ∼5 × 1018 cm–3, which results in a shift of the PL-signal peak to the wavelength region of 1.73–1.8 μm and to a shift of the absorption edge to the region of ∼1.65 μm. |
| Databáze: | OpenAIRE |
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