Nanotube carbon transistor (CNTFET): I-V and C-V, a qualitative comparison between fettoy simulator and compact model
| Autor: | A. Nouacry, A. Bouziane, Abdellah Aouaj |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Nanotube
business.industry Computer science Transistor Short-channel effect Hardware_PERFORMANCEANDRELIABILITY Carbon nanotube Carbon nanotube field-effect transistor law.invention Quantum capacitance Hardware_GENERAL law MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor business Hardware_LOGICDESIGN |
| Zdroj: | 2009 International Conference on Multimedia Computing and Systems. |
| DOI: | 10.1109/mmcs.2009.5256697 |
| Popis: | The carbon nanotube transistor (CNTFET) are currently considered among the most promising component to replace the generation of MOSFET transistor, in order to surpass the short channel effects in the component. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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